China MMBT491A NPN Silicon Epitaxial Planar Transistor Suppliers, Factory

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● MMBT491A NPN Silicon Epitaxial Planar Transistor -Topdiode

MMBT491A NPN Silicon Epitaxial Planar Transistor1A 5V 150MHz SMD SOT-23

The MMBT441A is a silicon NPN transistor in a SOT−23 type surface mount package designed for use as a medium amplifier and switch

● MMBT491A NPN Silicon Epitaxial Planar Transistor Introduction

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA

● MMBT491A NPN Silicon Epitaxial Planar Transistor Features

* General purpose

* Three current gain groups

* High stability and high reliability

● MMBT491A NPN Silicon Epitaxial Planar Transistor Application

* MMBT491A general usage and suitable for many different applications

● MMBT491A NPN Silicon Epitaxial Planar Transistor Qualification，Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● MMBT491A NPN Silicon Epitaxial Planar Transistor Outlines and External Dimensions

● MMBT491A NPN Silicon Epitaxial Planar Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25 °C)

Parameter	Symbol	Value	Unit
Collector Base Voltage	VCBO	40	V
Collector Emitter Voltage	VCEO	40	V
Emitter Base Voltage	VEBO	5	V
Collector Current	IC	1	A
Peak Pulse Current	ICM	2	A
Power Dissipation	Ptot	200	mW
Junction Temperature	TJ	150	°C
Storage Temperature Range	TStg	- 55 to + 150	°C

Characteristics at Ta = 25 OC

Parameter	Symbol	Min.	Max.	Unit
DC Current Gain at VCE= 5 V, IC= 1 mA at VCE= 5 V, IC= 500 mA at VCE= 5 V, IC= 1 A	hFE	300 300 200	- 900 -	- - -
Collector Base Cutoff Current at VCB= 30 V	ICBO	-	100	nA
Collector Emitter Cutoff Current at VCE= 30 V	ICES	-	100	nA
Emitter Base Cutoff Current at VEB= 4 V	IEBO	-	100	nA
Collector Emitter Saturation Voltage at IC= 500 mA, IB= 50 mA at IC= 1 A, IB= 100 mA	VCEsat	- -	0.3 0.5	V
Base Emitter Saturation Voltage at IC= 1 A, IB= 100 mA	VBEsat	-	1.2	V
Base Emitter Voltage at IC= 1 A, VCE= 5 V	VBE	-	1.1	V
Collector Output Capacitance at VCB= 10 V, f = 1 MHz	Cob	-	10	pF
Gain Bandwidth Product at VCE= 10 V, IC= 50 mA, f = 100 MHz	fT	150	-	MHz

● MMBT491A NPN Silicon Epitaxial Planar Transistor Related Parts

MMBT491A NPN Silicon Epitaxial Planar Transistor-Topdiode

RoHS Compliant

REACH Compliant

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