BC846 NPN Silicon Epitaxial General Purpose Transistor

●BC846 NPN Silicon Epitaxial General Purpose Transistor--Topdiode

BC846 NPN Silicon Epitaxial General Purpose Transistora semiconductor containing a solid, non-moving part that passes a charge. A transistor can amplify and switch electronic signals and electrical power and is made of semiconductor material with at least three terminals that are used to connect to an external circuit. Transistors can amplify a signal because output power can be higher than input power. By applying a voltage or a current to one of the terminal pairs, there is a change in current through another pair of terminals.

BC846 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856 is recommended

● BC846 NPN Silicon Epitaxial General Purpose Transistor Introduction

BC846 65 V, 100 mA NPN general-purpose transistors

NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.

● BC846 NPN Silicon Epitaxial General Purpose Transistor Features

* General-purpose transistors

* SMD plastic packages

* Two different gain selections

* High current gain

* Low collector-emitter saturation voltage

* Low noise between 30Hz and 15KHz

* Complementary types: BC856(PNP)

● BC846 NPN Silicon Epitaxial General Purpose Transistor Applications

* General-purpose switching and amplification

* For AF input stages and driver applications

* Signal processing

* Adapters

* Lighting application

● BC846 NPN Silicon Epitaxial General Purpose Transistor Qualification Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● BC846 NPN Silicon Epitaxial General Purpose Transistor Outlines and External Dimensions

● BC846 NPN Silicon Epitaxial General Purpose Transistor ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25 OC)

Characteristics at Ta = 25 OC

Parameter																															Symbol					Min.			Typ.		Max.					Unit
DC Current Gain at VCE= 5 V, IC= 2 mA																				Current Gain Group A B C											hFE hFE hFE					110 200 420			- - -		220 450 800					- - -
Collector Base Cutoff Current at VCB= 30 V																															ICBO					-			-		15					nA
Collector Base Breakdown Voltage at IC= 100 µA																				BC846 BC847, BC850 BC848, BC849											V(BR)CBOV(BR)CBOV(BR)CBO					80 50 30			- - -		- - -					V V V
Collector Emitter Breakdown Voltage at IC= 2 mA																				BC846 BC847, BC850 BC848, BC849											V(BR)CEOV(BR)CEOV(BR)CEO					65 45 30			- - -		- - -					V V V
Collector Emitter Breakdown Voltage at IC= 100 µA																				BC846, BC847 BC848,BC849,BC850											V(BR)EBOV(BR)EBO					6 5			- -		- -					V V
Collector Emitter Saturation Voltage at IC= 10 mA, IB= 0.5 mA at IC= 100 mA, IB= 5 mA																															VCEsatVCEsat					- -			- -		250 600					mV mV
Base Emitter On Voltage at VCE= 5 V, IC= 2 mA at VCE= 5 V, IC= 10 mA																															VBE(on)VBE(on)					580 -			- -		700 720					mV mV
Transition Frequency at VCE= 5 V, IC= 10 mA, f = 100 MHz																															fT					-			300		-					MHz
Output Capacitance at VCB= 10 V, f = 1 MHz																															Cob					-			-		6					pF
Input Capacitance at VEB= 0.5 V, f = 1 MHz																															Cib					-			9		-					pF

● BC846 NPN Silicon Epitaxial General Purpose Transistor Related Parts

Diode Rectifier M7-Topdiode

RoHS Compliant

REACH Compliant