BC849 NPN Silicon Epitaxial General Purpose Transistor

● BC849 NPN Silicon Epitaxial General Purpose Transistor --Topdiode

BC849 NPN Silicon Epitaxial General Purpose Transistor30V, 100mA NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

● BC849 NPN Silicon Epitaxial General Purpose Transistor Introduction

BC849 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC859 is recommended

● BC849 NPN Silicon Epitaxial General Purpose Transistor Features

* Low current

* Low voltage

* SMD plastic packages

* Two different gain selections

* High current gain

* Low collector-emitter saturation voltage

* Low noise between 30Hz and 15KHz

* Complementary types: BC859(PNP)

● BC849 NPN Silicon Epitaxial General Purpose Transistor Applications

* General-purpose switching and amplification

* For AF input stages and driver applications

* Signal processing

* Adapters

* Lighting application

● BC849 NPN Silicon Epitaxial General Purpose Transistor Qualification，Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode BC849 Available;

* Ex-work, FCA Terms, or FOB Terms

● BC849 NPN Silicon Epitaxial General Purpose Transistor Outlines and External Dimensions

● BC849 NPN Silicon Epitaxial General Purpose Transistor Electrical Characteristics

Absolute Maximum Ratings (Ta = 25 OC)

Characteristics at Ta = 25 OC

Parameter																															Symbol					Min.			Typ.		Max.					Unit
DC Current Gain at VCE= 5 V, IC= 2 mA																				Current Gain Group A B C											hFE hFE hFE					110 200 420			- - -		220 450 800					- - -
Collector Base Cutoff Current at VCB= 30 V																															ICBO					-			-		15					nA
Collector Base Breakdown Voltage at IC= 100 µA																				BC846 BC847, BC850 BC848, BC849											V(BR)CBOV(BR)CBOV(BR)CBO					80 50 30			- - -		- - -					V V V
Collector Emitter Breakdown Voltage at IC= 2 mA																				BC846 BC847, BC850 BC848, BC849											V(BR)CEOV(BR)CEOV(BR)CEO					65 45 30			- - -		- - -					V V V
Collector Emitter Breakdown Voltage at IC= 100 µA																				BC846, BC847 BC848,BC849,BC850											V(BR)EBOV(BR)EBO					6 5			- -		- -					V V
Collector Emitter Saturation Voltage at IC= 10 mA, IB= 0.5 mA at IC= 100 mA, IB= 5 mA																															VCEsatVCEsat					- -			- -		250 600					mV mV
Base Emitter On Voltage at VCE= 5 V, IC= 2 mA at VCE= 5 V, IC= 10 mA																															VBE(on)VBE(on)					580 -			- -		700 720					mV mV
Transition Frequency at VCE= 5 V, IC= 10 mA, f = 100 MHz																															fT					-			300		-					MHz
Output Capacitance at VCB= 10 V, f = 1 MHz																															Cob					-			-		6					pF
Input Capacitance at VEB= 0.5 V, f = 1 MHz																															Cib					-			9		-					pF

● BC849 NPN Silicon Epitaxial General Purpose Transistor Related Parts

BC849 NPN Silicon Epitaxial General Purpose Transistor-Topdiode

RoHS Compliant

REACH Compliant