China MMBT4401 Transistor General Purpose Surface Mount Suppliers, Factory

Product Description
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MMBT4401 Transistor General Purpose Surface Mount --Topdiode

MMBT4401 Transistor General Purpose Surface Mount Bipolar Transistors - BJT SOT-23 NPN GEN PUR Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 310mW Surface Mount SOT-23. This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

● MMBT4401 Transistor General Purpose Surface Mount Introduction

The MMBT4401 is a silicon NPN transistor in a SOT−23 type surface mount package designed for use as a medium amplifier and switch

● MMBT4401 Transistor General Purpose Surface Mount Features

* General purpose

* Three current gain groups

* High stability and high reliability

● MMBT4401 Transistor General Purpose Surface Mount Application

* Signal processing

* Switching, Amplification

* Commercial grade

● MMBT4401 Transistor General Purpose Surface Mount Product Qualification, Lead time, Shipping Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● MMBT4401 Transistor General Purpose Surface Mount Outlines and External Dimensions

● MMBT4401 Transistor General Purpose Surface Mount ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25 °C)

Parameter	Symbol	Value	Unit
Collector Base Voltage	VCBO	60	V
Collector Emitter Voltage	VCEO	40	V
Emitter Base Voltage	VEBO	6	V
Collector Current Continuous	IC	600	mA
Total Device Dissipation FR-5 Board1) Derate above 25OC	Ptot	200 1.8	mW mW/OC
Thermal Resistance Junction to Ambient	RθJA	417	OC/W
Junction Temperature	Tj	150	°C
Storage Temperature Range	Tstg	- 55 to + 150	°C

MMBT4401
Characteristics at Ta = 25 OC

Parameter	Symbol	Min.	Max.	Unit
DC Current Gain at VCE= 1 V, IC= 0.1 mA at VCE= 1 V, IC= 1 mA at VCE= 1 V, IC= 10 mA at VCE= 1 V, IC= 150 mA at VCE= 2 V, IC= 500 mA	hFE	20 40 80 100 40	- - - 300 -	- - - - -
Collector Base Cutoff Current at VCB= 35 V	ICBO	-	0.1	µA
Emitter Base Cutoff Current at VEB= 5 V	IEBO	-	0.1	µA
Collector Base Breakdown Voltage at IC= 0.1mA	V(BR)CBO	60	-	V
Collector Emitter Breakdown Voltage at IC= 1 mA	V(BR)CEO	40	-	V
Emitter Base Breakdown Voltage at IE= 0.1 mA	V(BR)EBO	6	-	V
Collector Emitter Saturation Voltage at IC= 150 mA, IB= 15 mA at IC= 500 mA, IB= 50 mA	VCE(sat) VCE(sat)	- -	0.4 0.75	V V
Base Emitter Saturation Voltage at IC= 150 mA, IB= 15 mA at IC= 500 mA, IB= 50 mA	VBE(sat) VBE(sat)	0.75 -	0.95 1.2	V V
Current Gain Bandwidth Product at VCE= 10 V, IC= 20 mA, f = 100 MHz	fT	250	-	MHz
Collector Base Capacitance at VCB= 5 V, f = 1 MHz	Cob	-	6.5	pF
Delay Time VCC= 30 V, VEB= 2 V, IC= 150 mA, IB1= 15 mA	td	-	15	ns
Rise Time VCC= 30 V, VEB= 2 V, IC= 150 mA, IB1= 15 mA	tr	-	20	ns
Storage Time VCC= 30 V, IC= 150 mA, IB1= IB2= 15 mA	ts	-	225	ns
Fall Time VCC= 30 V, IC= 150 mA, IB1= IB2= 15 mA	tf	-	30	ns

● MMBT4401 Transistor General Purpose Surface Mount Related Parts

MMBT4401 Transistor General Purpose Surface Mount -Topdiode

RoHS Compliant

REACH Compliant

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MMBT4401 Transistor General Purpose Surface Mount

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Product Description
Specifications
Download

MMBT4401 Transistor General Purpose Surface Mount --Topdiode

● MMBT4401 Transistor General Purpose Surface Mount Introduction

● MMBT4401 Transistor General Purpose Surface Mount Features

● MMBT4401 Transistor General Purpose Surface Mount Application

● MMBT4401 Transistor General Purpose Surface Mount Product Qualification, Lead time, Shipping Terms

● MMBT4401 Transistor General Purpose Surface Mount Outlines and External Dimensions

● MMBT4401 Transistor General Purpose Surface Mount ELECTRICAL CHARACTERISTICS

● MMBT4401 Transistor General Purpose Surface Mount Related Parts

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