MMBT3906 NPN Epitaxial Silicon General Purpose Transistor

MMBT3906 NPN Epitaxial Silicon General Purpose Transistor--Topdiode

Bipolar Transistors - BJT PNP -40Vcbo -40Vceo Vebo -6V -200mA

MMBT3906 PNP Epitaxial Silicon General Purpose Transistoris designed for general purpose amplifier and switching applications.

MMBT3906 is a general-purpose transistor with continuously adjustable voltage, low dynamic output resistance, flat temperature characteristics, low output voltage noise.

As complementary types the NPN transistors MMBT3904 is recommended.

● MMBT3906 PNP Epitaxial Silicon General Purpose Transistor Introduction

MMBT3906 PNP Silicon General Purpose Transistorin a SOT23 plastic package. NPN complement: MMBT3904.

● MMBT3906 PNP Epitaxial Silicon General Purpose Transistor FEATURES

* Collector current capability IC = −200 mA

* Collector-emitter voltage VCEO = −40 V.

* Complementary NPN Type: MMBT3904

* Low power loss, high efficiency

* Ideal for automated placement

● MMBT3906 PNP Epitaxial Silicon General Purpose Transistor Application

* Switching mode power supply (SMPS)

* Adapters

* Lighting application

* On-board DC/DC converter

● MMBT3906 PNP Epitaxial Silicon General Purpose Transistor  Product Qualification, Lead time, Shipping Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● MMBT3906 NPN Epitaxial Silicon General Purpose TransistorOutlines and External Dimensions

● MMBT3906 PNP Epitaxial Silicon General Purpose Transistor Electrical Characteristics

Absolute Maximum Ratings (Ta = 25 °C)

Characteristics at Ta = 25 °C

●  MMBT3906 PNP Epitaxial Silicon General Purpose Transistor Related Parts

MMBT3906 PNP Epitaxial Silicon General Purpose Transistor -Topdiode

RoHS Compliant

REACH Compliant