China MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Suppliers, Factory

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● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor --Topdiode

MMBT3904 NPN Epitaxial Silicon General Purpose Transistor， Bipolar Transistors - BJT 40V NPN 40Vceo 6Vebo 200mA

MMBT3904 NPN Epitaxial Silicon General Purpose Transistor is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100 MHz as an amplifier

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Introduction

The MMBT3904 from Topdidoe is a surface mount, NPN general purpose amplifier in SOT-23 package. This device is suitable for general purpose amplification and switching applications.

PNP complement: MMBT3906

● MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23

MMBT3904NPN Epitaxial Silicon General Purpose Transistor Features

* Epitaxial Planar Die Construction

* Complementary PNP Type Available (MMBT3906)

* Ideal for Medium Power Amplification and Switching

* Collector current capability IC = 200 mA

* Collector-emitter voltage VCEO = 40 V.

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Application

* General switching

* Driver Modules like Relay Driver, LED driver etc...

* Amplifier modules like Audio amplifiers, signal Amplifier etc...

* VCB and VBE is high hence can be used to control voltage loads up to 40V

* Commonly used in TV and other home appliances

* Signal Processing,

* Power Management, Portable Devices,

* Consumer Electronics, Industrial

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Product Qualification, Lead time, Shipping Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (L = 25 °C)

Parameter	Symbol	Value	Unit
Collector Base Voltage	VCBO	60	V
Collector Emitter Voltage	VCEO	40	V
Emitter Base Voltage	VEBO	6	V
Collector Current	lc	200	mA
Power Dissipation	Ptot	350	mW
Junction Temperature	Tj	150	°C
Storage Temperature Range	Tstg	-55 to +150	°C

MMBT3904

Characteristics at Ta= 25 °C Parameter	Symbol	Min.	Max.	Unit
DC Current Gain at VCE= 1 V, lc = 0.1 mA	hFE	40	-	-
at VCE= 1 V, lc = 1 mA	hFE	70	-	-
at VCE= 1 V, lc= 10 mA	hFE	100	300	-
at VCE= 1 V, lc=50 mA	hFE	60	-	-
atVCE= 1 V, lc= 100 mA	hFE	30	-	-
Collector Base Cutoff Current atVCb= 30 V	ICBO	-	50	nA
Emitter Base Cutoff Current at VEB=6 V	IEBO	-	50	nA
Collector Base Breakdown Voltage at lc= 10 uA	V(BR)CBO	60	-	V
Collector Emitter Breakdown Voltage at lc = 1 mA	V(BR)CEO	40	-	V
Emitter Base Breakdown Voltage atIe=10uA	V(BR)EBO	6	-	V
Collector Emitter Saturation Voltage at lc= 10 mA, lB= 1 mA at lc= 50 mA, lB= 5 mA	VCE(sat)	-	0.2 0.3	V V
Base Emitter Saturation Voltage at lc= 10 mA, lB= 1 mA at lc= 50 mA, lB= 5 mA	VBE(sat) VBE(sat)	0.65 -	0.85 0.95	V V
Current Gain Bandwidth Product at VCE=20 V, lc= 10 mA, f= 100 MHz	fT	300	-	MHz
Collector Output Capacitance at VCB=5V, lE=0, f=1 MHz	Cob	-	4	pF
Delay Time at VCC= 3 V, VBE= 0.5 V, lc= 10 mA, lB1= 1 mA	td	-	35	ns
Rise Time at Vcc=3 V,VBE=0.5 V, lc = 10 mA,Ib1=1 mA	tr	-	35	ns
Storage Time at Vcc=3 V, lc=10 mA,IB1=-IB2=1 mA	ts	-	200	ns
Fall Time at VCC= 3 V, lc= 10 mA, I = -I = 1 mA	tf	-	50	ns

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Related Parts

MMBT3904 NPN Epitaxial Silicon General Purpose Transistor -Topdiode

RoHS Compliant

REACH Compliant

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Product Description
Specifications
Download

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor --Topdiode

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Introduction

● MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Application

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Product Qualification, Lead time, Shipping Terms

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor ELECTRICAL CHARACTERISTICS

● MMBT3904 NPN Epitaxial Silicon General Purpose Transistor Related Parts

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