China BC850 NPN Silicon Epitaxial General Purpose Transistor Suppliers, Factory

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● BC850 NPN Silicon Epitaxial General Purpose Transistor -- Topdiode

BC850 NPN Silicon Epitaxial General Purpose Transistor 30V, 100mA NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

● BC850 NPN Silicon Epitaxial General Purpose Transistor Introduction

BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC860 is recommended

● BC850 NPN Silicon Epitaxial General Purpose Transistor Features

* Low current

* Low voltage

* SMD plastic packages

* Two different gain selections

* High current gain

* Low collector-emitter saturation voltage

* Low noise between 30Hz and 15KHz

* Complementary types: BC860(PNP)

● BC850 NPN Silicon Epitaxial General Purpose Transistor Applications

* General-purpose switching and amplification

* For AF input stages and driver applications

* Signal processing

* Adapters

* Lighting application

● BC850 NPN Silicon Epitaxial General Purpose Transistor Qualification,Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode BC850 Available

* Ex-work, FCA Terms, or FOB Terms

● BC850 NPN Silicon Epitaxial General Purpose Transistor Outlines and External Dimensions

● BC850 NPN Silicon Epitaxial General Purpose Transistor Electrical Characteristics

Absolute Maximum Ratings (Ta = 25°C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

BC846

VCBO

80

V

BC847, BC850

VCBO

50

V

BC848, BC849

VCBO

30

V

Collector Emitter Voltage

BC846

VCEO

65

V

BC847, BC850

VCEO

45

V

BC848, BC849

VCEO

30

V

Emitter Base Voltage

BC846, BC847

VE BO

6

V

BC848, BC849, BC850

VE BO

5

V

Collector Current

IC

100

mA

Peak Collector Current

ICM

200

mA

Power Dissipation

Ptot

300

mW

Junction Temperature

Tj

150

OC

Storage Temperature Range

Tstg

- 65 to + 150

OC

Characteristics at Ta = 25 °C

Parameter		Symbol	Min.	Typ.	Max.	Unit
DC Current Gain at VCE= 5 V, IC= 2 mA	Current Gain Group A B C	hFE hFE hFE	110 200 420	- - -	220 450 800	- - -
Collector Base Cutoff Current at VCB= 30 V		ICBO	-	-	15	nA
Collector Base Breakdown Voltage at IC= 100 µA	BC846 BC847, BC850 BC848, BC849	V(BR)CBOV(BR)CBOV(BR)CBO	80 50 30	- - -	- - -	V V V
Collector Emitter Breakdown Voltage at IC= 2 mA	BC846 BC847, BC850 BC848, BC849	V(BR)CEOV(BR)CEOV(BR)CEO	65 45 30	- - -	- - -	V V V
Collector Emitter Breakdown Voltage at IC= 100 µA	BC846, BC847 BC848,BC849,BC850	V(BR)EBOV(BR)EBO	6 5	- -	- -	V V
Collector Emitter Saturation Voltage at IC= 10 mA, IB= 0.5 mA at IC= 100 mA, IB= 5 mA		VCEsatVCEsat	- -	- -	250 600	mV mV
Base Emitter On Voltage at VCE= 5 V, IC= 2 mA at VCE= 5 V, IC= 10 mA		VBE(on)VBE(on)	580 -	- -	700 720	mV mV
Transition Frequency at VCE= 5 V, IC= 10 mA, f = 100 MHz		fT	-	300	-	MHz
Output Capacitance at VCB= 10 V, f = 1 MHz		Cob	-	-	6	pF
Input Capacitance at VEB= 0.5 V, f = 1 MHz		Cib	-	9	-	pF

● BC850 NPN Silicon Epitaxial General Purpose Transistor Related Parts

BC850 NPN Silicon Epitaxial General Purpose Transistor -Topdiode

RoHS Compliant

REACH Compliant

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BC850 NPN Silicon Epitaxial General Purpose Transistor

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Product Description
Specifications
Download

● BC850 NPN Silicon Epitaxial General Purpose Transistor -- Topdiode

● BC850 NPN Silicon Epitaxial General Purpose Transistor Introduction

● BC850 NPN Silicon Epitaxial General Purpose Transistor Features

● BC850 NPN Silicon Epitaxial General Purpose Transistor Applications

● BC850 NPN Silicon Epitaxial General Purpose Transistor Qualification,Shipping and Terms

● BC850 NPN Silicon Epitaxial General Purpose Transistor Outlines and External Dimensions

● BC850 NPN Silicon Epitaxial General Purpose Transistor Electrical Characteristics

● BC850 NPN Silicon Epitaxial General Purpose Transistor Related Parts

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