China BC818W NPN Silicon Epitaxial Transistor General Purpose Suppliers, Factory

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● BC818W NPN Silicon Epitaxial Transistor General Purpose transistors --Topdiode

BC818W NPN Silicon Epitaxial Transistor General Purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

● BC818W NPN Silicon Epitaxial Transistor General Purposes Introduction

BC817W NPN Silicon Epitaxial Planar Transistors for general purpose and switching applications

These transistors are subdivided into three groups –16, -25, -40 according to their current gain.

● BC818W NPN Silicon Epitaxial Transistor General Purposes Features

* High current

* Three current gain selections

* High current gain

* Low collector-emitter saturation voltage

* Complementary types:BC807W

● BC818W NPN Silicon Epitaxial Transistor General Purposes Applications

* General purpose switching and amplification application.

* Lighting application

* Switching mode power supply (SMPS)

● BC818W NPN Silicon Epitaxial Transistor General Purposes Product Qualification, Lead time, Shipping Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● BC818W NPN Silicon Epitaxial Transistor general purpose Outlines and External Dimensions

● BC818W NPN Silicon Epitaxial Transistor general purpose MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25℃)

Parameter	Symbol	Value	Unit
Collector Base Voltage BC817W BC818W	VCBO	50 30	V
Collector Emitter Voltage BC817W BC818W	VCEO	45 25	V
Emitter Base Voltage	VEBO	5	V
Collector Current	IC	500	mA
Power Dissipation	Ptot	200	mW
Junction Temperature	TJ	150	℃
Storage Temperature Range	Tstg	-65 to +150	℃

1) Transistor mounted on an FR4 printed-circuit board.
Characteristics at Tamb = 25℃

Parameter		Symbol	Min.	Max.	Unit
DC Current Gain		hFE	100 160 250 40
at VCE= 1 V, IC= 100 mA				250
	-16W			400	-
	-25W			600	-
	-40W			-	-
at VCE= 1 V, IC= 500 mA					-
Collector Cutoff Current at VCB= 20 V		ICBO	-	100	nA
Emitter Cutoff Current at VEB= 5 V		IEBO	-	100	nA
Collector Base Breakdown Voltage at IC= 10 µA	BC817W BC818W	V(BR)CBO	50 30	-	V
Collector Emitter Breakdown Voltage at IC= 10 mA	BC817W BC818W	V(BR)CEO	45 25	-	V
Emitter Base Breakdown Voltage at IE= 10 µA		V(BR)EBO	5	-	V
Collector Emitter Saturation Voltage at IC= 500 mA, IB= 50 mA		VCEsat	-	0.7	V
Base Emitter Voltage at IC= 500 mA, VCE= 1 V		VBE	-	1.2	V
Transition Frequency at VCE= 5 V, IC= 10 mA, f = 100 MHz		fT	100	-	MHz
Collector Capacitance at VCB= 10 V, f = 1 MHz		Cc	-	5	pF

● BC818W NPN Silicon Epitaxial Transistor general purpose Related Parts

BC818W NPN Silicon Epitaxial Transistor general purpose

RoHS Compliant

REACH Compliant

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