● BC547 NPN Epitaxial Silicon General Purpose Transistor --Topdiode
BC547 NPN Epitaxial Silicon General Purpose Transistor 45V 0.1A TO-92 Package
BC546…BC550 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier application. These transistors are subdivided into three groups A, B and C according to their current gain
● BC547 NPN Epitaxial Silicon General Purpose Introduction
BC547 is an NPN bi-polar junction transistor. A transistor, stands for transfer of resistance, is commonly used to amplify current. A small current at its base controls a larger current at collector & emitter terminals.
● BC547 NPN Epitaxial Silicon General Purpose Features
* Switching and Amplifier
* High−Voltage
* Low−Noise
* Complement to BC557
* Collector Current: 100mA
* Collector Power Dissipation: 500mW
● BC547 NPN Epitaxial Silicon General Purpose Application
* General purpose switching and amplification
* Sensor Circuits
* Audio Preamp circuits
* Audio Amplifier Stages
* Switching Loads under 100mA
* Transistor Darlington Pairs
* Radio Frequency Circuits
● BC547 NPN Epitaxial Silicon General Purpose Qualification,Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Diode
* Ex-work, FCA Terms, or FOB Terms
● BC547 NPN Epitaxial Silicon General Purpose Outlines and External Dimensions
● BC547 NPN Epitaxial Silicon General Purpose MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25°C)
Parameter
|
Symbol
|
Value
|
Unit
|
Collector Base Voltage
|
BC546
|
|
80
|
|
|
BC547, BC550
|
VCBO
|
50
|
V
|
|
BC548, BC549
|
|
30
|
|
Collector Emitter Voltage
|
BC546
|
|
65
|
|
|
BC547, BC550
|
VCEO
|
45
|
V
|
|
BC548, BC549
|
|
30
|
|
Emitter Base Voltage
|
VEBO
|
6
|
V
|
Collector Current (DC)
|
IC
|
100
|
mA
|
Peak Collector Current
|
ICM
|
200
|
mA
|
Total Power Dissipation
|
Ptot
|
500
|
mW
|
Junction Temperature
|
Tj
|
150
|
°C
|
Storage Temperature Range
|
Tstg
|
- 65 to + 150
|
°C
|
Characteristics at Ta = 25 °C
Parameter
|
Symbol
|
Min.
|
Max.
|
Unit
|
DC Current Gain
at VCE= 5 V, IC= 2 mA Current Gain Group A
B
C
|
hFE
|
110
200
420
|
220
450
800
|
-
-
-
|
Collector Base Cutoff Current
at VCB= 30 V
|
ICBO
|
-
|
15
|
nA
|
Emitter Base Cutoff Current
at VEB= 5 V
|
IEBO
|
-
|
100
|
nA
|
Collector Base Breakdown Voltage BC546
at IC= 100 µA
BC548, BC549
|
V(BR)CBO
|
80
50
30
|
-
-
-
|
V
|
Collector Emitter Breakdown Voltage BC546
at IC= 1 mA BC547, BC550
BC548, BC549
|
V(BR)CEO
|
65
45
30
|
-
-
-
|
V
|
Emitter Base Breakdown Voltage
at IE= 10 µA
|
V(BR)EBO
|
6
|
-
|
V
|
Characteristics at Ta = 25 °C
Parameter
|
Symbol
|
Min.
|
Max.
|
Unit
|
Collector Emitter Saturation Voltage
at IC= 10 mA, IB= 0.5 mA
at IC= 100 mA, IB= 5 mA
|
VCE(sat)
|
-
-
|
0.25
0.6
|
V
|
Base Emitter On Voltage
at VCE= 5 V, IC= 2 mA
at VCE= 5 V, IC= 10 mA
|
VBE(on)
|
0.55
-
|
0.7
0.77
|
V
|
Transition Frequency
at VCE= 5 V, IC= 10 mA, f = 100 MHz
|
fT
|
100
|
-
|
MHz
|
Collector Base Capacitance at VCB= 10 V, f = 1 MHz
|
Ccb
|
-
|
6
|
pF
|