2N2907 NPN Epitaxial Silicon General Purpose Transistor

2N2907 NPN Epitaxial Silicon General Purpose Transistor --Topdiode

2N9707 with high current value of 600mA, a low voltage of 40V, package TO-92

2N2907-2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations.

● 2N2907 NPN Epitaxial Silicon General Purpose Transistor Introduction

2N2907 series type is silicon PNP Epitaxial Planar transistors designed for small signal, general purpose switching applications.

● 2N2907 NPN Epitaxial Silicon General Purpose Transistor Features

* Low collector saturation voltage(max 60V)

* High current (max 600mA)

* High speed switching

* Emitter-Base Voltage VEBO 5.0 V

* Continuous Collector Current IC 600 mA

● 2N2907 NPN Epitaxial Silicon General Purpose Transistor Application

* Low power amplification

* Switching applications.

* For making alarms or dual LED or light bulb flashes.

* Power Management, Consumer Electronics, Portable Devices, Industrial

● 2N2907 NPN Epitaxial Silicon General Purpose Transistor Qualification, Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● 2N2907 PNP Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

● 2N2907 PNP Epitaxial Silicon General Purpose Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25°C)

2N2907 - 2N2907A
Characteristics at Ta = 25 °C

● 2N2907 PNP Epitaxial Silicon General Purpose Transistor Related Parts

2N2907PNP Epitaxial Silicon General Purpose Transistor -Topdiode

RoHS Compliant

REACH Compliant