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MMBT4401W NPN Epitaxial Silicon General Purpose Transistor

MMBT4401W NPN Epitaxial Silicon General Purpose Transistor , Bipolar Transistors - BJT 600mA 60V NPN SOT-323

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MMBT3904W NPN Epitaxial Silicon General Purpose Transistor

MMBT3904W NPN Epitaxial Silicon General Purpose Transistor , Bipolar Transistors - BJT 200mA 60V NPN
The maximum collector emitter voltage VCEO is 40V, the maximum collector current is 200mA, and the maximum collector power consumption is 200mW. The package is SOT-323.

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MMBT2222W NPN Epitaxial Silicon General Purpose Transistor

MMBT2222W NPN Epitaxial Silicon General Purpose Transistor , 60V 0.6A 200mW SOT 323 MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications

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2N3906 NPN Epitaxial Silicon General Purpose Transistor

2N3906 NPN Epitaxial Silicon General Purpose Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

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2N3904 NPN Epitaxial Silicon General Purpose Transistor

2N3904 NPN Epitaxial Silicon General Purpose Transistor , Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 625 mW Through Hole TO-92

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2N2907 NPN Epitaxial Silicon General Purpose Transistor

2N2907 NPN Epitaxial Silicon General Purpose Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations.

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