LL4148 Small Signal Fast Switching Diode-Topdiode
LL4148 is a Silicon Epitaxial planar diode with an identification of cathode band, comes in glass package version. It has high conductance and high reliability
● LL4148 Small Signal Fast Switching Diode Introduction
Diodes - General Purpose, Power, Switching Small Signal Diode
LL4148 SMD Small Signal Fast Switching Diodes High-Speed 200mA 100V LL-34 (SOD-80)
● LL4148 Small Signal Fast Switching Diode Features
* 500mW Power dissipation
* 4pF at 1MHz Total capacitance
● LL4148 Small Signal Fast Switching Diode Applications
* Extreme fast switches
* Can be used to prevent reverse polarity problem
* Protect Power electronic switches that are operating with high switching frequency.
* Used as a protection device
* Current flow regulators
* Signal Processing
● LL4148 Small Signal Fast Switching Diode Qualification,Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Diode LL4148 Available
* Ex-work, FCA Terms, or FOB Terms
● LL4148 Small Signal Fast Switching Diode Outlines and External Dimensions
● LL4148 Small Signal Fast Switching Diode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
|
Symbol
|
Value
|
Unit
|
Peak Reverse Voltage
|
VRM
|
100
|
V
|
Reverse Voltage
|
VR
|
75
|
V
|
Average Rectified Forward Current
|
IF(AV)
|
200
|
mA
|
Non-repetitive Peak Forward Surge Current
|
at t = 1 s
at t = 1 ms
|
IFSM
|
0.5
1
4
|
A
|
|
at t = 1 μs
|
Power Dissipation
|
Ptot
|
5001)
|
mW
|
Junction Temperature
|
Tj
|
175
|
OC
|
Storage Temperature Range
|
Tstg
|
- 65 to + 175
|
OC
|
1) Valid provided that electrodes are kept at ambient temperature.
|
Characteristics at Ta = 25 OC
Parameter
|
Symbol
|
Min.
|
Max.
|
Unit
|
Forward Voltage at
IF= 10 mA
|
VF
|
-
|
1
|
V
|
Leakage Current
at VR= 20 V
at VR= 75 V
at VR= 20 V, Tj= 150 OC
|
IR
IR
IR
|
-
-
-
|
25
5
50
|
nA
µA
µA
|
Reverse Breakdown Voltage
tested with 100 µA Pulses
|
V(BR)R
|
100
|
-
|
V
|
Capacitance
at VR= 0, f = 1 MHz
|
Ctot
|
-
|
4
|
pF
|
Voltage Rise when Switching ON tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
|
Vfr
|
-
|
2.5
|
V
|
Reverse Recovery Time
at IF= 10 mA to IR= 1 mA, VR= 6 V, RL= 100 Ω
|
trr
|
-
|
4
|
ns
|
Thermal Resistance Junction to Ambient Air
|
RthA
|
-
|
0.351)
|
K/mW
|
Rectification Efficiency
at f = 100 MHz, VRF= 2 V
|
ηV
|
0.45
|
-
|
-
|
1) Valid provided that electrodes are kept at ambient temperature.