● 1N4448 Small Signal Fast Switching Diode –Topdiode
1N4448 Fast Switching Diode
● 1N4448 Small Signal Fast Switching Diode Introduction
Diode Standard 100 V 150mA Through Hole DO-35
This diode is also available in MiniMELF case with the type designation LL4448.
● 1N4448 Small Signal Fast Switching Diode Features
* Silicon epitaxial planar diodes
* General Purpose Rectification
● 1N4448 Small Signal Fast Switching Diode Applications
* High-speed switching
● 1N4448 Small Signal Fast Switching Diode Qualification,Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Diode 1N4448 Available
* Ex-work, FCA Terms, or FOB Terms
● 1N4448 Small Signal Fast Switching Diode Outlines and External Dimensions
● 1N4448 Small Signal Fast Switching Diode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25 OC)
Absolute Maximum Ratings (Ta= 25OC)
|
Parameter
|
Symbol
|
Value
|
Unit
|
Peak Reverse Voltage
|
VRM
|
100
|
V
|
Reverse Voltage
|
VR
|
75
|
V
|
Average Rectified Forward Current
|
IF(AV)
|
150
|
mA
|
Surge Forward Current at t < 1 s
|
IFSM
|
500
|
mA
|
Power Dissipation
|
Ptot
|
5001)
|
mW
|
Junction Temperature
|
Tj
|
200
|
OC
|
Storage Temperature Range
|
Tstg
|
- 65 to + 200
|
OC
|
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Characteristics at Ta = 25C
Parameter
|
Symbol
|
Min.
|
Max.
|
Unit
|
Forward Voltage
at IF= 5 mA
at IF= 100 mA
|
VF
|
0.62
-
|
0.72
1
|
V
|
Reverse Leakage Current
at VR= 20 V
at VR= 75 V
at VR= 20 V, Tj= 150 OC
|
IR
IR
IR
|
-
-
-
|
25
5
50
|
nA
µA
µA
|
Reverse Breakdown Voltage
at IR= 100 µA
|
V(BR)R
|
100
|
-
|
V
|
Capacitance
at VR= 0, f = 1 MHz
|
Ctot
|
-
|
4
|
pF
|
Reverse Recovery Time
at IF= 10 mA to IR= 1 mA, VR= 6 V, RL= 100 Ω
|
trr
|
-
|
4
|
ns
|
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