MMBT7002K

Mosfet MMBT7002K is N-Channel Enhancement Mode Field Effect Transistor, MMBT7002K is in SOT-23 package.

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MosfetMMBT7002K -- Topdiode

Mosfet MMBT7002K is N-Channel Enhancement Mode Field Effect Transistor, MMBT7002K is in SOT-23 package.

● Mosfet MMBT7002K Features

* Low on resistance RDS(ON)

* Low gate threshold voltage

* Low input capacitance

* ESD protected up to 2KV

● Mosfet MMBT7002K Applications

* Signal processing, Logic level converter, Drivers

* Commercial grade

* Suffix-Q: AEC-Q101 compliant

* Suffix-AQ: in AEC-Q101 qualification

● Mosfet MMBT7002K Qualification，Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Mosfet MMBT7002K Available;

* Ex-work, FCA Terms, or FOB Terms

● Mosfet MMBT7002K Outlines and External Dimensions

● Mosfet MMBT7002K MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta= 25 °C)
Parameter	Symbol	Value	Unit
Drain-Source Voltage	Vdss	60	V
Gate-Source Voltage	Vgss	±20	V
Drain Current (Continuous)	Id	300	mA
Drain Current (Pulse Width < 10 us)	Idm	800	mA
Total Power Dissipation	Plot	350	mW
Operating and Storage Temperature Range	Tj, Tstg	-55 to + 150	°C

Characteristics at Ta= 25 °C
Parameter	Symbol	Min.	Max.	Unit
Drain Source Breakdown Voltage at lD= 10 uA	BVdss	60	-	V
Zero Gate Voltage Drain Current atVds= 60 V	Idss	-	1	uA
Gate Source Leakage Current at VGS= ±20 V	Igss	-	± 10	uA
Gate Threshold Voltage atVDs=10V, lD=250pA	Vgs(th)	1	2.5	V
Static Drain Source On-Resistance atVgs=10 V, lD= 500 mA atVgs=4.5V,lD=200mA	Rds(on)	-	3 4	Ω
Forward Transconductance at Vds= 10 V, Vd=200 mA	gfs	80	-	mS
Input Capacitance at Vds= 25 V, f= 1 MHz	Ciss	-	50	pF
Output Capacitance at Vds= 25 V, f= 1 MHz	Coss	-	25	pF
Reverse Transfer Capacitance at Vds= 25 V, f= 1 MHz	CfSS	-	5	pF

● Mosfet MMBT7002K Related Parts

MMBT7002K

RoHS Compliant

REACH Compliant

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