China MMFTN170 Suppliers, Factory

Product Description
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Mosfet MMFTN170-- Topdiode

MMFTN170 N-Channel Enhancement Mode Field Effect Transistor, MMFTN170 is in SOT-23 package.

● Mosfet MMFTN170 Features

* Voltage controlled small signal switch

* High saturation current capability

● Mosfet MMFTN170 Applications

* Signal processing, Drivers, Logic level converter

* Commercial grade

● Mosfet MMFTN170 Qualification，Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Mosfet MMFTN170 Available;

* Ex-work, FCA Terms, or FOB Terms

● Mosfet MMFTN170 Outlines and External Dimensions

● Mosfet MMFTN170 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25 °C)

Parameter	Symbol	Value	Unit
Drain-Source Voltage	Vdss	60	V
Drain-Gate Voltage (RGs《1 MΩ)	Vdgr	60	V
Gate-Source Voltage	Vgss	±20	V
Drain Current-Continuous Drain Current-Pulsed	Id	500 800	mA
Total Power Dissipation	Ptot	300	mW
Operating and Storage Temperature Range	Tj, Tstg	-55 to + 150	°C

Characteristics at Ta = 25 °C

Parameter	Symbol	Min.	Typ-	Max.	Unit
Drain-Source Breakdown Voltage at lD= 100uA	V(BR)DSS	60	-	-	V
Zero Gate Voltage Drain Current atVds= 25 V	Idss	-	-	0.5	uA
Gate-Body Leakage, Forward at VGs = 15 V	Igssf	-	-	10	nA
Gate-Source Threshold Voltage atVds = Vgs, Id= 1 mA	VGS(th)	0.8	-	3	V
Static Drain-Source On-Resistance atVGS= 10V, lD= 200 mA	RDS(on)		-	5	Ω
Forward Tra nscond uctan ce atVds-2 VDS(on), lD= 200 mA	Qfs		320	-	mS
Input Capacitance atVds=10 V,f= 1 MHz	Ciss		-	40	pF
Output Capacitance atVds=10 V,f= 1 MHz	Coss		-	30	pF
Reverse Transfer Capacitance atVds=10 V,f= 1 MHz	Crss		-	10	pF
Turn-On Time atVdd= 25 V, lD= 500 mA, VGS= 10 V,RGen= 50Ω	t(on)		-	10	ns
Turn-Off Delay Time atVdd= 25 V, lD= 500 mA, VGS= 10 V, RGEN= 50Ω	k(off)		-	10	ns

● Mosfet MMFTN170 Related Parts

MMFTN170 Topdiode

RoHS Compliant

REACH Compliant

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