MMBT4401W NPN Epitaxial Silicon General Purpose Transistor

MMBT4401W NPN Epitaxial Silicon General Purpose Transistor--Topdiode

MMBT4401W NPN Epitaxial Silicon General Purpose Transistor, Bipolar Transistors - BJT 600mA 60V NPN SOT-323

MMBT4401W NPN Epitaxial Planar Medium Power Transistor for switching and amplifier applications

● MMBT4401W NPN Epitaxial Silicon General Purpose Transistor Introduction

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

● MMBT4401WNPN Epitaxial Silicon General Purpose Transistor Features

* NPN epitaxial silicon, planar design

* Collector-emitter voltage

* VCE = 40V

* Collector current IC = 600mA

● MMBT4401W NPN Epitaxial Silicon General Purpose Transistor Application

* Amplifier and switch

● MMBT4401W NPN Epitaxial Silicon General Purpose Transistor Qualification，Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● MMBT4401W NPN Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

● MMBT4401W NPN Epitaxial Silicon General Purpose Transistor  MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25 °C)

Characteristics at Ta = 25 OC

● MMBT4401W NPN Epitaxial Silicon General Purpose Transistor Related Parts

MMBT4401W NPN Epitaxial Silicon General Purpose Transistor - Topdiode

RoHS Compliant

REACH Compliant