China MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Suppliers, Factory

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MMBT3904WNPN Epitaxial Silicon General Purpose Transistor--Topdiode

MMBT3904W NPN Epitaxial Silicon General Purpose Transistor ,Bipolar Transistors - BJT 200mA 60V NPN

The maximum collector emitter voltage VCEO is 40V, the maximum collector current is 200mA, and the maximum collector power consumption is 200mW. The package is SOT-323.

● MMBT3904W NPN Epitaxial Silicon General Purpose TransistorIntroduction

The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70, which is designed for low power surface mount applications.

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Features

* Complementary PNP Type Available (MMBT3906W)

* Ideal for Medium Power Amplification and Switching

* Low current capability IC=0.2A

* Low emitter voltage VCEO=40V

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Application

* for general purpose amplifier applications

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Qualification，Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25 °C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

60

V

Collector Emitter Voltage

VCEO

40

V

Emitter Base Voltage

VEBO

6

V

Collector Current

IC

200

mA

Total Power Dissipation

Ptot

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

- 55 to + 150

°C

MMBT3904W
Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain
at VCE= 1 V, IC= 0.1 mA
at VCE= 1 V, IC= 1 mA
at VCE= 1 V, IC= 10 mA
at VCE= 1 V, IC= 50 mA
at VCE= 1 V, IC= 100 mA

hFE

40
70
100
60
30

-
-
300
-
-

-
-
-
-
-

Collector Emitter Cutoff Current
at VCE= 30 V

ICES

-

50

nA

Emitter Base Cutoff Current
at VEB= 3 V

IEBO

-

50

nA

Collector Base Breakdown Voltage at IC= 10 µA

V(BR)CBO

60

-

V

Collector Emitter Breakdown Voltage
at IC= 1 mA

V(BR)CEO

40

-

V

Emitter Base Breakdown Voltage
at IE= 10 µA

V(BR)EBO

6

-

V

Collector Emitter Saturation Voltage
at IC= 10 mA, IB= 1 mA
at IC= 50 mA, IB= 5 mA

VCE(sat)

-
-

0.2
0.3

V

Base Emitter Saturation Voltage
at IC= 10 mA, IB= 1 mA
at IC= 50 mA, IB= 5 mA

VBE(sat)

0.65
-

0.85
0.95

V

Transition Frequency
at VCE= 20 V, -IE= 10 mA, f = 100 MHz

fT

300

-

MHz

Collector Output Capacitance
at VCB= 10 V, f = 100 KHz

Cob

-

4

pF

Delay Time
at VCC= 3 V, VBE(OFF)= 0.5 V, IC= 10 mA, IB1= 1 mA

td

-

35

ns

Rise Time
at VCC= 3 V, VBE(OFF)= 0.5 V, IC= 10 mA, IB1= 1 mA

tr

-

35

ns

Storage Time
at VCC= 3 V, IC= 10 mA, IB1= -IB2= 1 mA

tstg

-

200

ns

Fall Time
at VCC= 3 V, IC= 10 mA, IB1= -IB2= 1 mA

tf

-

50

ns

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Related Parts

MMBT3904W NPN Epitaxial Silicon General Purpose Transistor -Topdiode

RoHS Compliant

REACH Compliant

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Product Description
Specifications
Download

MMBT3904WNPN Epitaxial Silicon General Purpose Transistor--Topdiode

● MMBT3904W NPN Epitaxial Silicon General Purpose TransistorIntroduction

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Features

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Application

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Qualification，Delivery, Shipping and Terms

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

● MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Related Parts

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