China MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Suppliers, Factory

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MMBT2222W NPN Epitaxial Silicon General Purpose Transistor--Topdiode

MMBT2222W NPN Epitaxial Silicon General Purpose Transistor , 60V 0.6A 200mW SOT 323

MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Introduction

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Features

* Low rDS(on) Provides Higher Efficiency and Extends Battery Life

* Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space

* NPN epitaxial silicon, planar design

* Collector-emitter voltage VCE=30V

* Collector current IC=600mA

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Application

*For switching and amplifier applications

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Qualification，Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

●MMBT2222W NPN Epitaxial Silicon General Purpose Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25°C)

Parameter	Symbol	Value		Unit
		MMBT2222W	MMBT2222AW
Collector Base Voltage	VCBO	60	75	V
Collector Emitter Voltage	VCEO	30	40	V
Emitter Base Voltage	VEBO	5	6	V
Collector Current	IC	600		mA
Total Power Dissipation	Ptot	200		mW
Junction Temperature	Tj	150		°C
Storage Temperature Range	Tstg	- 55 to + 150		°C

MMBT2222W / MMBT2222AW
Characteristics at Ta = 25 °C

Parameter		Symbol	Min.	Max.	Unit
DC Current Gain at VCE= 10V, IC= 0.1mA at VCE= 10 V, IC= 1mA at VCE= 10V, IC= 10mA at VCE= 1 V, IC= 150mA at VCE= 10V, IC= 150mA at VCE= 10 V, IC= 500mA	MMBT2222W MMBT2222AW	hFE	35 50 75 50 100 30 40	- - - - 300 - -	- - - - - - -
Collector Base Voltage at IC= 10 µA	MMBT2222W MMBT2222AW	VCBO	60 75	- -	V
Collector Emitter Voltage at IC= 10 mA	MMBT2222W MMBT2222AW	VCEO	30 40	- -	V
Emitter Base Voltage at IE= 10 µA	MMBT2222W MMBT2222AW	VEBO	5 6	- -	V
Collector Base Cutoff Current at VCB= 50 V at VCB= 60 V	MMBT2222W MMBT2222AW	ICBO	- -	100 100	nA
Emitter Base Cutoff Current at VEB= 3 V		IEBO	-	100	nA
Collector Emitter Saturation Voltage at IC= 150 mA, IB= 15 mA at IC= 500 mA, IB= 50 mA	MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW	VCE(sat)	- - - -	0.4 0.3 1.6 1	V
Base Emitter Saturation Voltage at IC= 150 mA, IB= 15 mA at IC= 500 mA, IB= 50 mA	MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW	VBE(sat)	- 0.6 - -	1.3 1.2 2.6 2	V
Transition Frequency at VCE= 20 V, -IE= 20 mA, f = 100 MHz		fT	300	-	MHz
Collector Output Capacitance at VCB= 10 V, f = 100 KHz		Cob	-	8	pF
Emitter Input Capacitance at VEB= 0.5 V, f = 100 KHz		Cib	-	25	pF
Delay Time at VCC= 30 V, VBE(OFF)= 0.5 V, IC= 150 mA, IB1= 15 mA		td	-	10	ns
Rise Time at VCC= 30 V, VBE(OFF)= 0.5 V, IC= 150 mA, IB1= 15 mA		tr	-	25	ns
Storage Time at VCC= 30 V, IC= 150 mA, IB1= -IB2= 15 mA		tstg	-	225	ns
Fall Time at VCC= 30V, IC= 150 mA, IB1= -IB2= 15 mA		tf	-	60	ns

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Related Parts

MMBT2222W NPN Epitaxial Silicon General Purpose Transistor - TOPDIODE

RoHS Compliant

REACH Compliant

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Product Description
Specifications
Download

MMBT2222W NPN Epitaxial Silicon General Purpose Transistor--Topdiode

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Introduction

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Features

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Application

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Qualification，Delivery, Shipping and Terms

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

●MMBT2222W NPN Epitaxial Silicon General Purpose Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

● MMBT2222W NPN Epitaxial Silicon General Purpose Transistor Related Parts

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