Trigger Diode DB4 -- Topdiode
DB4 Trigger Diode is Silicon Bidirectional
Trigger Diodes, DB4 in DO-35 Package.
● Trigger Diode DB4 Features
* The three layer, two terminal, axial
lead, hermetically sealed diacs are designed specifically for triggering
thyristors. They demonstrate low breakover current at breakover voltage as they
withstand peak pulse current, The breakover symmetry is within three volts
(DB3, DB4). These diacs are intended for use in thyrisitors phase control,
circuits for lamp dimming, universal motor speed control, and heat control.
● Trigger Diode DB4 Applications
* Triggering of Triacs and Thyristors AC
switches and controls Dimmer circuits Commercial grade
* Functioning as a Trigger Diode with a
Fixed Voltage Reference, DB3/DB4 can be used in Conjunction with Triacs for
Simplified Gate Control Circuits or as a Starting Element in Fluorescent Lamp
Ballasts
● Trigger Diode DB4 Qualification,Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Trigger Diode DB4
Available;
* Ex-work, FCA Terms, or FOB Terms
● Trigger Diode DB4 Outlines and External Dimensions
● Trigger Diode DB4 MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings Tamb =25°C unless otherwise specified
Parameter
|
Test Condition
|
Symbol
|
Value
|
Unit
|
Repetitive peak on-state current
|
tp = 20 jis, f = 120Hz
|
Itrm
|
2
|
A
|
Power dissipation
|
I = 4 mm,TlW 25 °C
|
Ptot
|
150
|
mW
|
Junction temperature
|
|
Tj
|
125
|
°C
|
Storage temperature
|
|
Tstg
|
-40-125
|
°C
|
Electrical Characteristics Tamb =25 °C unless otherwise specified
Parameter
|
Test Condition
|
Part
|
Symbol
|
Min
|
Typ.
|
Max
|
Unit
|
Breakover voltage *
|
C=22 nF **
|
DB4
|
Vbo
|
35
|
40
|
45
|
V
|
Breakover voltage symmetry
|
C=22 nF **
|
|
IVboi-Vbo2I
|
—
|
—
|
3
|
V
|
Dynamic breakover voltage *
|
VboandVf@ 10 mA
|
|
AV
|
5
|
—
|
—
|
V
|
Output voltage *
|
See diagram 3 (R=20Q)
|
|
Vo
|
5
|
—
|
—
|
V
|
Breakover current *
|
C=22 nF **
|
|
I BO
|
—
|
—
|
100
|
uA
|
Rise time *
|
See diagram 2
|
|
tr
|
—
|
—
|
2
|
us
|
Leakage current *
|
Vr= 0.5Vbomax
|
|
Ir
|
—
|
—
|
10
|
uA
|
Peak current *
|
See diagram 3 (Gate)
|
|
Ip
|
0.30
|
—
|
—
|
A
|
Applicable to both forward and reverse directions. ** Connected in parallel to the device.