BAS316WS High speed switching Diodes –Topdiode
Silicon Epitaxial Planar Switching Diode
● BAS316WS High speed switching Diodes Introduction
Switching Diode 250mA/100V SOD-323 SMD Diodes
● BAS316WS High speed switching Diodes Features
* Low Forward Voltage Drop
* Low Reverse Current
* High-speed Switching
● BAS316WS High speed switching Diodes Applications
* High-speed switching
● BAS316WS High speed switching Diodes Qualification,Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Diode BAS316WS Available
* Ex-work, FCA Terms, or FOB Terms
● BAS316WS High speed switching Diodes Outlines and External Dimensions
● BAS316WS High speed switching Diodes MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25 C)
Parameter
|
Symbol
|
Value
|
Unit
|
Repetitive Peak Reverse Voltage
|
VRRM
|
100
|
V
|
Reverse Voltage
|
VR
|
100
|
V
|
Continuous Forward Current
|
IF
|
250
|
mA
|
Repetitive Peak Forward Current
|
IFRM
|
500
|
mA
|
Non-Repetitive Peak Forward Current t = 1 μs
t = 1 ms
t = 1 s
|
IFSM
|
4
1
0.5
|
A
|
Total Power Dissipation
|
Ptot
|
200
|
mW
|
Junction Temperature
|
Tj
|
150
|
OC
|
Storage Temperature Range
|
Tstg
|
- 65 to + 150
|
OC
|
Characteristics at Ta = 25 OC
Parameter
|
Symbol
|
Max.
|
Unit
|
Forward Voltage
at IF= 1 mA
at IF= 10 mA
at IF= 50 mA
at IF= 150 mA
|
VF
|
0.715
0.855
1
1.25
|
V
|
Reverse Current
at VR= 25 V
at VR= 75 V
at VR= 25 V, TJ= 150 OC
at VR= 75 V, TJ= 150 OC
|
IR
|
30
1
30
50
|
nA
μA
μA
μA
|
Diode Capacitance
at VR= 0 V, f = 1 MHz
|
Ctot
|
1.5
|
pF
|
Reverse Recovery Time
at IF= IR= 10 mA, Irr= 0.1 X IR, RL= 100 K
|
trr
|
4
|
ns
|
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