BAS216WS High speed switching diodes –Topdiode
Silicon Epitaxial Planar Switching Diode
● BAS216WS High speed switching diodes Introduction
BAS216WS SOD-323 85V 250mA
● BAS216WS High speed switching diodes Features
* Ultra small plastic SMD package
* High switching speed: max. 4 ns
* Reverse voltage: max. 75 V
* Repetitive peak reverse voltage: max. 85 V
● BAS216WS High speed switching diodes Applications
* High-speed switching
● BAS216WS High speed switching diodes Qualification,Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Diode BAS216WS Available
* Ex-work, FCA Terms, or FOB Terms
● BAS216WS High speed switching diodes Outlines and External Dimensions
● BAS216WS High speed switching diodes MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
|
Symbol
|
Value
|
Unit
|
Repetitive Peak Reverse Voltage
|
VRRM
|
85
|
V
|
Reverse Voltage
|
VR
|
75
|
V
|
Continuous Forward Current
|
IF
|
250
|
mA
|
Repetitive Peak Forward Current
|
IFRM
|
500
|
mA
|
Non-repetitive Peak Forward Surge Current
|
at t = 1 s
at t = 1 ms
|
IFSM
|
0.5
1
4
|
A
|
|
at t = 1 μs
|
Power Dissipation
|
Ptot
|
200
|
mW
|
Junction Temperature
|
Tj
|
150
|
OC
|
Storage Temperature Range
|
Tstg
|
- 65 to + 150
|
OC
|
Characteristics at Ta = 25 OC
Parameter
|
Symbol
|
Max.
|
Unit
|
Forward Voltage
at IF= 1 mA
at IF= 10 mA
at IF= 50 mA
at IF= 150 mA
|
VF
|
0.715
0.855
1
1.25
|
V
|
Reverse Current
at VR= 25 V
at VR= 75 V
at VR= 25 V, TJ= 150OC
at VR= 75 V, TJ= 150OC
|
IR
|
30
1
30
50
|
nA
µA
µA
µA
|
Diode Capacitance
at VR= 0 V, f = 1 MHz
|
Ctot
|
1.5
|
pF
|
Reverse Recovery Time
at IF= 10 mA to IR= 10 mA, IR= 1 mA, RL= 100 Ω
|
trr
|
4
|
ns
|
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